Ultra-low leakage SRAM design with sub-32 nm tunnel FETs for low standby power applications

Publication TypeJournal Paper
TitleUltra-low leakage SRAM design with sub-32 nm tunnel FETs for low standby power applications
Author(s)A. Makosiej
N. Gupta
N. Vakul
A. Vladimirescu
S.D. Cotofana
S. Mahapatra
A. Amara
C. Anghel
Publication DateDecember 2016
Journal NameMicro & Nano Letters
Volume11
Issue
Page Numbers828-831
ISSN1750-0443
publishedPublished
Selected PublicationNo
Notedoi:10.1049/mnl.2016.0442
Topic(s)None
Theme(s)Dependable Nano Computing
Project(s)None
Group(s)Computer Engineering

IEEE BibTex entry:
@article{,
author = "A. Makosiej and N. Gupta and N. Vakul and A. Vladimirescu and S.D. Cotofana and S. Mahapatra and A. Amara and C. Anghel",
title = "Ultra-low leakage SRAM design with sub-32 nm tunnel FETs for low standby power applications",
journal = "Micro & Nano Letters",
volume = "11",
issue = "",
month = "December",
year = "2016",
pages = "828-831"
}