Ultra-low leakage SRAM design with sub-32 nm tunnel FETs for low standby power applications
Publication Type | Journal Paper |
---|---|
Title | Ultra-low leakage SRAM design with sub-32 nm tunnel FETs for low standby power applications |
Author(s) | A. Makosiej N. Gupta N. Vakul A. Vladimirescu S.D. Cotofana S. Mahapatra A. Amara C. Anghel |
Publication Date | December 2016 |
Journal Name | Micro & Nano Letters |
Volume | 11 |
Issue | |
Page Numbers | 828-831 |
ISSN | 1750-0443 |
published | Published |
Selected Publication | No |
Note | doi:10.1049/mnl.2016.0442 |
Topic(s) | None |
Theme(s) | Dependable Nano Computing |
Project(s) | None |
Group(s) | Computer Engineering |
IEEE BibTex entry:
@article{,
author = "A. Makosiej and N. Gupta and N. Vakul and A. Vladimirescu and S.D. Cotofana and S. Mahapatra and A. Amara and C. Anghel",
title = "Ultra-low leakage SRAM design with sub-32 nm tunnel FETs for low standby power applications",
journal = "Micro & Nano Letters",
volume = "11",
issue = "",
month = "December",
year = "2016",
pages = "828-831"
}
author = "A. Makosiej and N. Gupta and N. Vakul and A. Vladimirescu and S.D. Cotofana and S. Mahapatra and A. Amara and C. Anghel",
title = "Ultra-low leakage SRAM design with sub-32 nm tunnel FETs for low standby power applications",
journal = "Micro & Nano Letters",
volume = "11",
issue = "",
month = "December",
year = "2016",
pages = "828-831"
}