Ionizing radiation modeling in DRAM transistors

Publication TypeConference Paper
TitleIonizing radiation modeling in DRAM transistors
Author(s)M.C.R. Fieback
M. Taouil
S. Hamdioui
M. Rovatti
Publication DateMarch 2018
Conference NameIEEE 19th Latin-American Test Symposium
Period12-16 March 2018
LocationSao Paulo, Brazil
ISBN978-1-5386-1472-3
Page Numbers
publishedPublished
Selected PublicationNo
NoteBest paper award!
Topic(s)Reliability
Theme(s)Dependable Nano Computing
Project(s)None
Group(s)Computer Engineering

IEEE BibTex entry:
@inproceedings{,
author = "M.C.R. Fieback and M. Taouil and S. Hamdioui and M. Rovatti",
title = "Ionizing radiation modeling in DRAM transistors",
booktitle = "Proc. IEEE 19th Latin-American Test Symposium",
address = "Sao Paulo, Brazil",
month = "March",
year = "2018",
pages = ""
}