Ionizing radiation modeling in DRAM transistors
Publication Type | Conference Paper |
---|---|
Title | Ionizing radiation modeling in DRAM transistors |
Author(s) | M.C.R. Fieback M. Taouil S. Hamdioui M. Rovatti |
Publication Date | March 2018 |
Conference Name | IEEE 19th Latin-American Test Symposium |
Period | 12-16 March 2018 |
Location | Sao Paulo, Brazil |
ISBN | 978-1-5386-1472-3 |
Page Numbers | |
published | Published |
Selected Publication | No |
Note | Best paper award! |
Topic(s) | Reliability |
Theme(s) | Dependable Nano Computing |
Project(s) | None |
Group(s) | Computer Engineering |
IEEE BibTex entry:
@inproceedings{,
author = "M.C.R. Fieback and M. Taouil and S. Hamdioui and M. Rovatti",
title = "Ionizing radiation modeling in DRAM transistors",
booktitle = "Proc. IEEE 19th Latin-American Test Symposium",
address = "Sao Paulo, Brazil",
month = "March",
year = "2018",
pages = ""
}
author = "M.C.R. Fieback and M. Taouil and S. Hamdioui and M. Rovatti",
title = "Ionizing radiation modeling in DRAM transistors",
booktitle = "Proc. IEEE 19th Latin-American Test Symposium",
address = "Sao Paulo, Brazil",
month = "March",
year = "2018",
pages = ""
}