Bit Line Coupling Memory Tests for Single-Cell Fails in SRAMs 
Publication Type | Conference Paper |
---|---|
Title | Bit Line Coupling Memory Tests for Single-Cell Fails in SRAMs |
Author(s) | I.S. Irobi Z. Al-Ars S. Hamdioui |
Publication Date | April 2010 |
Conference Name | 28th IEEE VLSI Test Symposium |
Period | 19-22 April 2010 |
Location | Santa Cruz, USA |
ISBN | t.b.s. |
Page Numbers | |
published | Published |
Selected Publication | No |
Note | |
Topic(s) | None |
Theme(s) | None |
Project(s) | None |
Group(s) | Computer Engineering |
IEEE BibTex entry:
@inproceedings{,
author = "I.S. Irobi and Z. Al-Ars and S. Hamdioui",
title = "Bit Line Coupling Memory Tests for Single-Cell Fails in SRAMs",
booktitle = "Proc. 28th IEEE VLSI Test Symposium",
address = "Santa Cruz, USA",
month = "April",
year = "2010",
pages = ""
}
author = "I.S. Irobi and Z. Al-Ars and S. Hamdioui",
title = "Bit Line Coupling Memory Tests for Single-Cell Fails in SRAMs",
booktitle = "Proc. 28th IEEE VLSI Test Symposium",
address = "Santa Cruz, USA",
month = "April",
year = "2010",
pages = ""
}