Bit Line Coupling Memory Tests for Single-Cell Fails in SRAMs 202_bit_line_coupling_memory_tests_for_singlecell_fails_in_sram.pdf

Publication TypeConference Paper
TitleBit Line Coupling Memory Tests for Single-Cell Fails in SRAMs
Author(s)I.S. Irobi
Z. Al-Ars
S. Hamdioui
Publication DateApril 2010
Conference Name28th IEEE VLSI Test Symposium
Period19-22 April 2010
LocationSanta Cruz, USA
ISBNt.b.s.
Page Numbers
publishedPublished
Selected PublicationNo
Note
Topic(s)None
Theme(s)None
Project(s)None
Group(s)Computer Engineering

IEEE BibTex entry:
@inproceedings{,
author = "I.S. Irobi and Z. Al-Ars and S. Hamdioui",
title = "Bit Line Coupling Memory Tests for Single-Cell Fails in SRAMs",
booktitle = "Proc. 28th IEEE VLSI Test Symposium",
address = "Santa Cruz, USA",
month = "April",
year = "2010",
pages = ""
}