Worst-Case Bit Line Coupling Backgrounds for Open Defects in SRAM Cells 396_worstcase_bit_line_coupling_backgrounds_for_open_defects_in.pdf

Publication TypeConference Paper
TitleWorst-Case Bit Line Coupling Backgrounds for Open Defects in SRAM Cells
Author(s)I.S. Irobi
Z. Al-Ars
Publication DateNovember 2009
Conference Name20th Annual Workshop on Circuits, Systems and Signal Processing
Period26-27 November 2009
LocationVeldhoven, The Netherlands
ISBNt.b.s.
Page Numbers
publishedPublished
Selected PublicationNo
Note
Topic(s)None
Theme(s)None
Project(s)None
Group(s)Computer Engineering

IEEE BibTex entry:
@inproceedings{,
author = "I.S. Irobi and Z. Al-Ars",
title = "Worst-Case Bit Line Coupling Backgrounds for Open Defects in SRAM Cells",
booktitle = "Proc. 20th Annual Workshop on Circuits, Systems and Signal Processing",
address = "Veldhoven, The Netherlands",
month = "November",
year = "2009",
pages = ""
}